1.5v drive pch + pch mosfet TT8J11 ? structure silicon p-channel mosfet ? features 1) low on-resistance. 2) small high power package. 3) low voltage drive(1.5v drive). ? application switching ? packaging specifications package taping code tcr basic ordering unit (pieces) 3000 TT8J11 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 12 v gate-source voltage v gss 0 to ? 8 v continuous i d ? 3.5 a pulsed i dp ? 12 a continuous i s ? 0.8 a pulsed i sp ? 12 a 1.25 w / total 1 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit 100 ?c / w /total 125 ?c / w /element * mounted on a ceramic board. type source current (body diode) drain current parameter parameter channel to ambient rth (ch-a) p d power dissipation tsst8 (1) (2) (3) (4) (8) (7) (6) (5) *2 *1 *1 * (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode abbreviated symbol : j11 ? dimensions (unit : mm) ? inner circuit ?2 ?1 (8) (7) (1) (2) ?2 ?1 (6) (5) (3) (4) 1/6 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J11 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss ? 12 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 10 ? av ds = ? 12v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 6v, i d = ? 1ma -3143 i d = ? 3.5a, v gs = ? 4.5v -4360 i d = ? 1.7a, v gs = ? 2.5v -6090 i d = ? 1.7a, v gs = ? 1.8v - 80 160 i d = ? 0.7a, v gs = ? 1.5v forward transfer admittance l y fs l4 - - si d = ? 3.5a, v ds = ? 6v input capacitance c iss - 2600 - pf v ds = ? 6v output capacitance c oss - 200 - pf v gs =0v reverse transfer capacitance c rss - 190 - pf f=1mhz turn-on delay time t d(on) - 15 - ns i d = ? 1.7a, v dd ? 6v rise time t r - 30 - ns v gs = ? 4.5v turn-off delay time t d(off) - 170 - ns r l =3.5? fall time t f - 60 - ns r g =10 ? total gate charge q g - 22 - nc i d = ? 3.5a gate-source charge q gs - 3.9 - nc v dd ? 6v gate-drain charge q gd - 3.1 - nc v gs = ? 4.5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 3.5a, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) m ? * * * * * * * * * * 2/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J11 ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 1.5v t a =25 c pulsed v gs = - 4.0v v gs = - 4.5v v gs = - 1.8v v gs = - 1.2v v gs = - 2.8v 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 1.5v v gs = - 4.0v v gs = - 4.5v v gs = - 1.8v v gs = - 1.2v v gs = - 2.8v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 2.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 1.8v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J11 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.7 static drain - source on - state resistance vs. drain current v gs = - 1.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.1 1 10 100 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : - i d [a] fig.8 forward transfer admittance vs. drain current v ds = - 6v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.9 typical transfer characteristics v ds = - 6v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : - i s [a] source - drain voltage : - v sd [v] fig.10 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 50 100 150 200 0 2 4 6 8 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : - v gs [v] fig.11 static drain - source on - state resistance vs. gate - source voltage t a =25 c pulsed i d = - 3.5a i d = - 0.7a 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : - i d [a] fig.12 switching characteristics t d(on) t r t d(off) t f v dd P - 6v v gs = - 4.5v r g =10 t a =25 c pulsed 4/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J11 0 1 2 3 4 5 0 5 10 15 20 25 gate - source voltage : - v gs [v] total gate charge : - q g [nc] fig.13 dynamic input characteristics t a =25 c v dd = - 6v i d = - 3.5a pulsed 10 100 1000 10000 100000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : - v ds [v] fig.14 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 5/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
TT8J11 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design e s protection circuit. v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes www.datasheet.co.kr datasheet pdf - http://www..net/
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